MOSFET 2N-CH 30V 1.8A SOT363 MCH6661-TL-W
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Description:
MOSFET 2N-CH 30V 1.8A SOT363
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Logic level gate,4V drive
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
MCH6661-TL-W(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31556,Price reference "real-time change" China/Hongkong。 MCH6661-TL-W package/specs, Download MCH6661-TL-W、Datasheet。